Method and Apparatus for Physical Confinement of a Liquid Meniscus Over a Semiconductor Wafer

ABSTRACT

Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

CROSS REFERENCE To RELATED APPLICATION

This application is a divisional and claims priority from U.S. patentapplication Ser. No. 13/240,657 filed on Sep. 27, 2011, and entitled“Method and Apparatus for Physical Confinement of a Liquid Meniscus Overa Semiconductor Wafer” which is a continuation in part and claimspriority from U.S. patent application Ser. No. 12/475,466 filed on May29, 2009, and entitled “Method and Apparatus for Physical Confinement ofa Liquid Meniscus Over a Semiconductor Wafer.” This application isrelated to U.S. patent application Ser. No. 12/194,308 filed on Aug. 19,2008, and entitled “REMOVING BUBBLES FROM A FLUID FLOWING DOWN THROUGH APLENUM,” and to U.S. patent application Ser. No. 11/532,491, filed onSep. 15, 2006, entitled “Method and Material for Cleaning a Substrate.”This application is also related to U.S. patent application Ser. No.61/013,950 filed on Dec. 14, 2007, and entitled “MATERIALS AND METHODSFOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA.” Theaforementioned patent applications are incorporated herein by referencefor all purposes.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to cleaning of a semiconductorwafer and, more particularly, to physical confinement of a liquidmeniscus applied on the surface of the semiconductor wafer during acleaning process.

2. Description of the Related Art

It is well-known in the art that there is a need to clean and dry asolid surface, such as a semiconductor wafer, that has undergone afabrication operation which leaves unwanted residues on the solidsurface. Examples of such fabrication operations include plasma etching(e.g., via etch or trench etch for copper dual damascene applications)and chemical mechanical polishing (CMP). Various cleaning processesinvolve applying a liquid chemistry to the semiconductor wafer as ameniscus and removing the liquid chemistry along with the releasedcontaminants. It is important to maintain the meniscus over the surfaceof the semiconductor wafer so that the liquid chemistry can work torelease the particle contaminants from the surface of the semiconductorwafer. Conventional cleaning processes use proximity heads to apply theliquid chemistry to one side or to both sides of the wafer and confiningthe meniscus through large air flow. Vacuum is then used to providesucking action to entrain the liquid chemistry. The conventionalconfinement of liquid chemistry using large air flow has its owndisadvantages. For instance, the liquid chemistry is exposed to thelarge air flow resulting in substantial loss of the liquid chemistry dueto evaporation. Some of the liquid chemistry used in the cleaningprocess is very expensive and any loss of liquid chemistry adds to thecost of cleaning.

Evaporation of the liquid chemistry in conventional cleaning processesis a serious issue, especially when using proximity heads. Specifically,due to high ambient air flow through the proximity heads, it isdifficult to control evaporation loss of the liquid chemistry.Additionally, in order to improve the cleaning process, it is common tointroduce the liquid chemistry at a higher temperature, typically about30 degrees Celsius to about 60 degrees Celsius. Liquid chemistry losscan dramatically increase when liquid chemistry is applied at a highertemperature. This is due to the fact that vapor pressure exponentiallyincreases with temperature and as evaporation is directly related tovapor pressure, evaporation also increases. As a result, the amount ofliquid chemistry that can be reclaimed for reuse dramatically decreases.

Another factor for consideration is the effect the high temperatureliquid chemistries have on the conventional cleaning apparatus, such aschemical heads, used in supplying these liquid chemistries. Most of theconventional cleaning apparatus operate optimally at room temperature.However, static temperature gradient that naturally develops because ofhigher temperature of the liquid chemistries cause these cleaningapparatus to deform resulting in mediocre operation of the apparatusduring cleaning.

Another disadvantage of the use of air for confining the meniscus is thecost of generating vacuum in the presence of this large flow of air. Thedesign requirement for generating the vacuum has to take intoconsideration this large air flow requirement so as to provide aneffective tool for cleaning.

Moreover, evaporation can result in significant changes in the cleaningprocess by liquid chemistry due to the chemical depletion or change inconcentration of the liquid chemistry. Chemical depletion occurs whenthe ambient air flow mixes with the hot liquid chemistry resulting invapor that is saturated with air and components of the liquid chemistrymaking it hard to isolate and reclaim the liquid chemistry. Excessiveconcentration of chemicals, on the other hand, commonly results with theuse of proprietary chemistry. Proprietary chemistry containsnon-volatile components and, if the proprietary chemistry isaqueous-based, evaporation causes the concentration of non-volatilecomponents to increase over time. This increase in the concentration ofnon-volatile components can adversely affect the cleaning performance ofthe liquid chemistry. Moreover, if the concentration of the liquidchemistry increases too much, there might be significant damage to thesemiconductor wafer.

In view of the foregoing, there is a need for an alternate solution thatavoids use of air flow to confine the liquid meniscus. It is in thiscontext that embodiments of the invention arise.

SUMMARY OF THE INVENTION

Broadly speaking, the present invention fills these needs by providing acleaning mechanism that is capable of preserving confinementcharacteristics of the liquid medium applied to a semiconductor waferwithout use of air flow. It should be appreciated that the presentinvention can be implemented in numerous ways, including as a process,an apparatus, or a system. Several inventive embodiments of the presentinvention are described below.

In one embodiment, a method for physically confining a liquid mediummeniscus over a semiconductor wafer, is provided. The method includesdelivering a liquid chemistry into a pocket of meniscus defined on asurface of the semiconductor wafer. The pocket of meniscus is definedbetween a first and a second chemical head. The liquid chemistry isdelivered into the pocket of meniscus in a single phase through angledinlet conduits defined at the first and second chemical heads,respectively. A step is defined along at least a portion of an outerperiphery of the pocket of meniscus such that the height of the step issufficient to preserve the confinement characteristics of the liquidchemistry. The liquid chemistry is removed through inner returnconduits. The inner return conduits are defined at a trailing edge ofthe first and second chemical heads within the pocket of meniscus suchthat the liquid chemistry may be removed from the semiconductor wafersurface in a single phase.

In another embodiment, an apparatus for physically confining a liquidmedium applied over a semiconductor wafer, is provided. The apparatusincludes a first and a second chemical head that are disposed to coverat least a portion of a top and an underside surface of thesemiconductor wafer. Each of the first and the second chemical headsincludes an angled inlet conduit at a leading edge of the respectivechemical heads so as to deliver liquid chemistry into a pocket ofmeniscus in a single phase. The pocket of meniscus is defined over theportion of the top and underside surface of the semiconductor wafercovered by the chemical heads. The pocket of meniscus is configured toreceive and contain the liquid chemistry applied to the surface of thesemiconductor wafer as a meniscus. A step is formed along an outerperiphery of the pocket of meniscus at a leading edge of the first andsecond chemical heads so as to substantially confine the meniscus of theliquid chemistry within the pocket of meniscus. The step is defined suchthat at least a portion of the pocket of meniscus is covered by the stepand step's height is sufficient to preserve confinement characteristicof the meniscus. An inner return conduit is located within the pocket ofmeniscus at a trailing edge of the respective chemical heads. The innerreturn conduit is used to remove the liquid chemistry from the surfaceof the semiconductor wafer in a single phase after the cleaning process.

In yet another embodiment of the invention, a system for physicallyconfining a meniscus of a liquid medium applied over a semiconductorwafer is provided. The system includes a carrier mechanism to receive,support and transport the semiconductor wafer along an axis. A first anda second chemical head are disposed to cover at least a portion of a topand an underside surface of the semiconductor wafer. The first andsecond chemical heads define a pocket of meniscus to receive the liquidmedium applied by the first and the second chemical heads during achemical clean. A first and a second rinse head are disposed to cover atleast a portion of a top and an underside surface of the semiconductorwafer. The first and the second rinse heads are configured to providerinsing chemistry into a pocket of meniscus defined over the portion ofthe wafer covered by the rinse heads to substantially rinse the surfaceof the semiconductor wafer after the chemical clean. Each of the firstchemical head, the second chemical head, the first rinse head and thesecond rinse head include an angled inlet conduit to deliver one ofliquid or rinsing chemistry in a single phase into the pocket ofmeniscus. The angled inlet conduit is located within the pocket ofmeniscus at a leading edge of the corresponding chemical or rinse heads.A step is formed along an outer periphery of the meniscus at a leadingedge of the corresponding chemical head or rinse head so as tosubstantially confine the meniscus of the liquid chemistry and therinsing chemistry within the pocket of the meniscus. The step is definedsuch that a height of the step is sufficient to preserve confinementcharacteristic of the meniscus. An inner return conduit to remove one ofthe liquid or rinsing chemistry from the surface of the wafer is definedin each of the chemical heads and rinse heads, respectively. The innerreturn conduit is located within the pocket of meniscus at a trailingedge of the corresponding chemical or rinse heads such that the liquidor rinsing chemistry may be removed from the surface of thesemiconductor wafer in a single phase. The angled inlet conduit at eachof the heads is defined close to but spaced apart from the step anddirected towards the pocket of meniscus so as to enable delivery of theliquid chemistry and rinsing chemistry into the pocket of meniscus in asingle phase.

The advantages of using the mechanism include substantial reduction orelimination of air flow to contain the meniscus. Eliminating air flowduring containment results in preserving liquid chemistry which wouldhave been otherwise lost due to evaporation. The process allows forsimpler tuning to preserve the confinement and other characteristics ofthe liquid meniscus. By preserving the characteristics of the liquidchemistry, optimal chemical clean can be achieved without considerabledamage to the wafer. Further, the mechanism allows for reclaiming andreusing the costly liquid chemistry, thereby making this a morecost-effective and efficient cleaning solution.

Other aspects and advantages of the present invention will becomeapparent from the following detailed description, taken in conjunctionwith the accompanying drawings, illustrating by way of example theprinciples of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings. Tofacilitate this description, like reference numerals designate likestructural elements.

FIG. 1 illustrates a cross-sectional view of a simplified chemical headused in confining a liquid meniscus over a semiconductor wafer, in oneembodiment of the invention.

FIG. 2 illustrates a cross-sectional view of various components of theconfinement chemical head used in confining the liquid meniscus, inanother embodiment of the invention. FIG. 2A illustrates an alternateembodiment of the chemical head with an inlet conduit disposed normal toa plane of liquid meniscus.

FIG. 3 illustrates a cross-sectional view of a simplified rinse headused in providing physical confinement of a liquid meniscus disposedover a semiconductor wafer, in one embodiment of the invention. FIG. 3Aillustrates an alternate embodiment of the rinse head with an inletconduit disposed normal to a plane of liquid meniscus.

FIG. 4 illustrates a cross-sectional view of various components of theconfinement rinse head used in providing physical confinement of aliquid meniscus disposed over a semiconductor wafer, in one embodimentof the invention.

FIG. 5 illustrates the effect of pressure on the meniscus curvature, inone embodiment of the invention.

FIG. 6 illustrates a correct step height outside confinement wall takinginto consideration pressure fluctuation in the meniscus layer, in oneembodiment of the invention.

FIG. 7 illustrates a simplified block diagram of a system for physicallyconfining a liquid meniscus applied over a semiconductor wafer, in oneembodiment of the invention.

FIG. 8 illustrates a flow chart of operations for physically confining aliquid meniscus applied over a semiconductor wafer, in one embodiment ofthe invention.

FIG. 9 illustrates a flow chart of operations for physically confining aliquid meniscus applied over a semiconductor wafer, in an alternateembodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Several embodiments for effectively confining a liquid meniscus over asemiconductor wafer are now described. It will be obvious, however, toone skilled in the art, that the present invention may be practicedwithout some or all of these specific details. In other instances, wellknown process operations have not been described in detail in order notto unnecessarily obscure the present invention.

Embodiments of the invention provide a mechanism for physicallyconfining a liquid meniscus applied to a semiconductor wafer without theuse of air flow. The mechanism uses proximity dispense heads with angledinlet conduits to deliver liquid chemical to the surface of the wafer. Apocket of meniscus is defined by a first and a second dispense head onat least a portion of the wafer exposed to the first and second dispenseheads. An angled inlet conduit to deliver liquid chemical is defined inthe first and second dispense heads such that the liquid chemical can bereceived within the defined pocket of meniscus in a single phase. A stepfeature, covering at least a portion of an outer peripheral region ofthe pocket of meniscus, is defined at each of the first and seconddispense heads such that the height of the step is sufficient topreserve the confinement characteristics of the liquid meniscus. Thefirst and the second dispense heads are misaligned such that a wall ofthe step adjoining the pocket of meniscus in the second dispense head isextended outward with respect to the wall of the step adjoining thepocket of meniscus in the first dispense head. An inner return conduitis defined within the pocket of meniscus at a trailing edge of the firstand second dispense heads to enable removal of the liquid chemistry fromthe pocket of meniscus in a single phase.

The embodiments of the invention provide an efficient mechanism toconfine a meniscus of a liquid chemistry applied over a wafer so thatthe liquid chemistry may be introduced and removed in a single phase.The mechanism avoids the use of air flow for confining the meniscus andwith it the associated disadvantages that might have otherwisecontaminated or chemically altered the liquid chemistry resulting inwastage of the liquid chemistry. Additionally, the mechanism furtherprevents any loss of the liquid chemistry due to evaporation whenexposed to the air flow. As the liquid medium used in the cleaningprocess are expensive, reclaiming and reusing of the liquid meniscus ishighly desirable. Thus, by introducing and removing liquid medium insingle phase and avoiding the use of air flow, the embodiments of theinvention provide ways to preserve the liquid medium withoutcompromising on the quality of cleaning of the wafer. The preservedliquid medium can be reused in the current or subsequent cleaningoperation making this an optimal and cost-effective solution.

With the above general understanding of the mechanism used to providephysical confinement of liquid meniscus applied over a semiconductorwafer, different embodiments of the invention will now be described indetail with reference to the various drawings.

FIG. 1 illustrates a side view of a simple block diagram of a mechanismusing chemical head for dispensing and removing liquid chemistry, in oneembodiment of the invention. As shown, the mechanism includes a firstchemical head 110 and a second chemical head 120 positioned to cover atleast a portion of a top and underside surface of a wafer 100. A pocketof meniscus 130 is defined in the portion covered by the first andsecond chemical heads, 110, 120. The wafer 100 is disposed over acarrier (not shown) and is moved along an axis. When the wafer 100slides through the pocket of meniscus, the pocket of meniscus is splitinto two menisci with one meniscus covering the portion of the topsurface of the wafer and the other meniscus covering the portion of thebottom surface of the wafer covered by the chemical heads, 110, 120.Once the wafer 100 moves out of the menisci region, the pocket ofmeniscus becomes a single meniscus. In one embodiment, the chemicalheads 110 and 120 are proximity heads. The embodiments are notrestricted to proximity heads but may include other types of heads ormechanism that can generate a pocket of meniscus 130 covering at least aportion of the wafer 100. A liquid medium, such as liquid chemistry, isintroduced into the pocket of meniscus 130 during a cleaning operation.A step is defined in each of the first and the second chemical head onthe outer periphery of the pocket of meniscus 130. The steps, 118, 128,act as physical confinement walls for the pocket of meniscus therebyconfining and maintaining the meniscus region.

An inlet conduit is defined in each of the first chemical head 110 andsecond chemical head 120, respectively, to introduce the liquidchemistry into the pocket of meniscus for application to the portion ofthe surface of the wafer 100 exposed to the meniscus. In one embodiment,the inlet conduits, 112 and 122, are located at the edge of the meniscusbut just inside the pocket of meniscus. Since the inlet conduits arelocated at the edge of the meniscus, the inlet conduits are pointedinward at an angle normal to a plane of the meniscus so that the liquidchemistry is introduced directly into the pocket of meniscus 130 awayfrom the step 118, 128, in a single phase. For more information onsingle phase delivery, reference can be made to U.S. application Ser.No. 12/194,308 filed on Aug. 19, 2008, entitled “REMOVING BUBBLES FROM AFLUID FLOWING DOWN THROUGH A PLENUM” and assigned to the assignee of thecurrent application, which is incorporated herein by reference.

Optimum meniscus confinement is obtained when the liquid chemistry isdelivered into the pocket of meniscus close to the step, 118, 128, onthe wafer entrance side. By providing angled inlet conduits, 112, 122,to deliver the liquid chemistry close to but pointed away from the step,the momentum of the liquid chemistry delivery flow is directed away fromthe physical confinement wall. This prevents the liquid flow kineticenergy and the related pressure force from breaking the meniscussurface, thus, maintaining the confinement characteristics of themeniscus.

The step, 118, 128, can surround the pocket of meniscus eithercompletely or partially. In one embodiment, the step surrounds thepocket of meniscus completely. In this embodiment, a single inletconduit, 112, 122, and a single inner return conduit, 114, 124,respectively, are defined in each of the chemical heads 110, 120,respectively. In another embodiment, the step surrounds the pocket ofmeniscus partially. In this embodiment, the step may cover the waferentrance at a leading edge of the pocket of meniscus 130 formed by thechemical heads, 110, 120, and along at least a portion of the lateralsides of the pocket of meniscus 130. In this embodiment, the inletconduit, 112, 122, defined in each of the first and second chemicalheads, 110, 120, include at least a row of inlet conduits defined alongthe inner edge of the pocket of meniscus and at least a row of innerreturn conduits along the inner edge at the trailing edge of the pocketof meniscus 130. Using a row of inlet conduits to deliver and a row ofinner return conduits to remove the liquid chemistry, it is possible toemploy low flow capability while maintaining flow uniformity whendelivering and removing the liquid chemistry. This results in a costeffective application of the liquid chemistry.

In addition to providing the physical confinement wall for the pocket ofmeniscus in the chemical heads, 110, 120, the step, 118, 128, isdesigned such that the height of the step, 118, 128, is sufficient toprevent the liquid medium from losing its confinement characteristics.As the liquid medium is delivered into the pocket of meniscus,gravitational force acts on the liquid medium and tends to force atleast some of the liquid medium to flow out of the pocket of meniscus.As the liquid flows out of the pocket of meniscus, the liquid medium maylose its confined meniscus shape if it comes in contact with a layer ofliquid formed outside the pocket of meniscus. The layer of liquid maynormally be formed on a top surface of the step outside the pocket ofmeniscus due to any number of reasons. For instance, during theintroduction of the wafer, the pressure of the meniscus fluctuates whenthe substrate and the carrier transporting the substrate enter or exitthe pocket of meniscus. The meniscus pressure may also fluctuate basedon fluctuation associated with liquid chemistries delivery and innerreturn flow. As a result of the meniscus pressure fluctuation, themeniscus curvature fluctuates. An exemplary chemical head with theexpanded surface of the liquid chemistry is illustrated in FIG. 5. Asthe meniscus curvature increases, the surface becomes more convex, asillustrated by 510. As a result, the liquid chemistry expands outside ofthe pinning corners. When the liquid surface touches any surface of thehead outside of the physical confinement wall, the liquid wets all thosesurfaces outside the physical confinement wall till a new meniscuspinning feature is reached (a sharp corner). The resulting meniscus maystill be confined, but not in the desired region. The process ofmeniscus jumping from the desired confinement wall to the undesiredexpanded meniscus is regulated by the energy required to activate thejump. This energy depends on the geometry of the head outside thephysical confinement wall and on the liquid surface tension.

In order to prevent the liquid medium from losing its meniscusconfinement characteristics, the height of the step outside the pocketof meniscus in the first and second chemical heads is increasedsufficiently so that the liquid medium flowing out of the pocket ofmeniscus will not be able to interface with the layer of liquid formedon the top surface of the step. The increase in the height of the stepis directly related to one or more operating constraints associated withthe liquid meniscus and the chemical heads, 110, 120, and is defined asa function of the operating constraints. The operating constraintsinclude one or more of flow rate, pressure, temperature, chemicalcomposition of the liquid medium, proximity of the chemical head surfaceto the surface of the wafer, and the dimensions of the chemical head.These operating constraints are dynamic. For instance, the pressure ofthe meniscus fluctuates when the wafer enters or exits the pocket ofmeniscus. As a result, the height of the step need to consider thefluctuation in the one or more operating constraints so that optimalmeniscus containment may be achieved.

In one embodiment, the height of the step is directly related to theprobability that the liquid chemistry 3-phase contact line jumps outsidethe desired meniscus boundary line. As the operational pressure in theliquid medium fluctuates, the meniscus can go unconfined if the stepheight is too low. The operational pressure depends on the chemical headgeometry, proximity of the head to the wafer surface and the flow rateof the liquid medium, among other constraint parameters. As a result,the height of the step is increased so that the meniscus can besubstantially confined. In one embodiment, the step height outside ofthe confinement wall is defined to be larger than 0.120″ or about 3 mm.FIG. 6 illustrates an example of a correct chemical head design with adefined outside confinement wall.

To optimize the use of liquid chemistry, the chemical heads, 110 and120, each include inner return conduits, 114, 124, respectively, definedwithin the pocket of the meniscus. The inner return conduits, 114, 124,are located at the trailing end of the chemical heads, 110, 120, so thatthe liquid chemistry may be removed in a single phase after the cleaningoperation. The inner return conduits, 114, 124, are located in a regionof the head that is in full contact with the liquid so that only liquidchemistry is returned through the inner return conduits. The number andposition of the inner return conduits may vary depending on the designand functionality desired. The removed liquid chemistry may be reused insubsequent cleaning operations.

The chemical head 120, disposed on the underside of the wafer alsoincludes a gravity drain 126 to receive any liquid chemistry that mayoverflow from the wafer surface during temporary unconfinement.Temporary unconfinement may occur when the carrier and the wafer 100enter or exit the pocket of meniscus. When this happens, the meniscuspressure increases temporarily, potentially causing liquid chemistryspillage. The gravity drain 126 may be located at the leading edge, thetrailing edge or at both the leading edge and trailing edge of thechemical head 120. The liquid chemistry collected in the gravity drain126 may be reused, thereby making optimal use of the liquid chemistry.In the embodiment where physical confinement is provided all around themeniscus, a small flow of liquid continuously overflows into the gutter.This is required by design as the delivery and the inner return flowscannot be made precisely identical. To assure that the meniscus regionis always filled with liquid, the delivery flow is made larger than theinner return flow. In one embodiment, the delivery flow is about 100ml/min larger than the inner return flow. The excess flow is returnedthrough the gutter and re-used. As the wafer moves away from thechemical heads 110, 120, a layer of liquid chemistry 132 may remain onthe wafer. The layer may remain on the wafer to prevent othercontaminants from adhering to the surface of the wafer or to preventpremature drying.

In one embodiment, the chemical head disposed over the top of the wafer100 may include a hemi-wicking topography. This topography is to enhancethe surface wetting by the liquid chemistry. For instance, the surfacewithin the pocket of meniscus over the top of the wafer 100 between theangled inlet conduit 112 and inner return conduit 114 may have thehemi-wicking surface topography to increase the wetting of the liquidchemistry within the pocket so as to improve the cleaning process. Formore information on hemi-wicking surface topography, reference can bemade to U.S. application Ser. No. 12/471,169, filed on May 22, 2009,entitled “MODIFICATION TO SURFACE TOPOGRAPHY OF PROXIMITY HEAD” andassigned to the assignee of the current application, which isincorporated herein by reference.

There is a possibility for residual liquid to be present between theupper and lower heads in the meniscus region, after the liquid deliveryis turned off. As the wafer completes processing, the wafer is deliveredat the wafer output area and the wafer carrier returns to the waferinput area. As the empty carrier travels backwards through the proximityheads, any leftover liquid chemistry present in the meniscus areabetween the heads may wet the carrier surface if the level of thecarrier plane is at the level of the liquid chemistry. This can beavoided if the pocket of the lower head is deeper than the maximumheight a liquid puddle can have on a flat surface. In one embodiment,the pocket depth can be calculated using an empirical formula providedin Table 1. The empirical formula is obtained using various processparameters associated with the application of the liquid chemistry.Based on the calculation, the lower head pocket depth is designed to beat least 0.130″ or 3.3 mm, in one embodiment. This assures that theresidual liquid chemistry possibly stagnating on the bottom of the headpocket cannot reach the carrier plane. Larger pocket depths wouldproduce the same results but would necessitate increase in the meniscusvolume. It should be noted, that the word substrate and wafer are usedinterchangeably to mean a material upon which semiconductor devices arefabricated.

TABLE 1$e = {{2\; \kappa^{- 1}{\sin \left( \frac{\vartheta_{E}}{2} \right)}\mspace{14mu} \kappa^{- 1}} = \sqrt{\frac{\gamma}{\rho \; g}}}$wherein e is the height of a liquid puddle on a flat surface, θ_(E) isthe equilibrium contact angle of water on the head material (PVDF), κ⁻¹is the capillary length, γ is the surface tension, ρ is the density, andg is the gravitational acceleration. * For water at 20° C., e = 3.5 mm(0.138″). Measured height: 0.130″ * For water at 80° C., e = 3.1 mm(0.123″) Lower head pocket depth: 0.130″

A wall of the step adjacent to the pocket of meniscus in each of thechemical heads, 110, 120, disposed at the top and underside of the wafer100 is offset from each other to better confine the meniscus. Neglectinggravitational force, the meniscus surface is described by a section of acircle. In the presence of an overpressure in the meniscus, the liquidsurface is convex with portion of the meniscus being outside of themeniscus confinement wall. Considering gravitational force on themeniscus surface, the weight of the liquid can induce a pressure on themeniscus surface larger than what the surface tension can sustain,inducing leakage of the liquid into the gutter. By offsetting theposition of the lower step wall defining the physical confinement inrespect to the upper step wall, footing can be provided to counterbalance the force induced by the weight of the liquid, reducing thepossibility of liquid leakage into the gutter. The offset that has shownpromising results is between about 0.030″ or about 0.7 mm and about0.25″ or about 6 mm. This design results in the lower chemical head 120to be wider than the upper chemical wall 110.

FIG. 2 illustrates the various component features and offsetmeasurements of exemplary chemical heads, 110, 120, that have shownpromising results in physical confinement of a liquid meniscus appliedover a wafer, in one embodiment of the invention. A pocket of meniscus130 is formed between a first chemical head 110 and a second chemicalhead 120. The meniscus pocket 130 covers at least a portion of the waferwhen the wafer moves under the chemical heads 110, 120. The width ofmeniscus pocket can vary with the geometry of the chemical heads, 110,120. In one embodiment, the pocket of meniscus defined by the chemicalheads may cover the width of the wafer. In another embodiment, themeniscus pocket may cover only a portion of the top and bottom surfaceof the substrate. In the embodiment illustrated in FIG. 2, the width ofthe meniscus pocket is about 38 mm. A step 118, 128, is defined along atleast a portion of an outer periphery of the meniscus pocket 130 at aleading edge of each of the first and second chemical heads 110, 120.The height of the step is defined empirically and is sufficient topreserve the containment characteristic of the liquid chemistry in themeniscus.

In another embodiment, the height of the step wall outside the meniscusconfinement region depends on the operational pressure of the meniscusconfined therein. The operational pressure of the meniscus, in turn, maydepend on one or more parameters including geometry of the chemicalheads, proximity of the chemical heads to the surface of the wafer, andthe liquid chemistry flow, among other parameter constraints. Using ameniscus width of about 2 cm, a chemical head to wafer gap between about0.3 mm and about 2 mm with an optimum wafer gap of about 1 mm; and aliquid chemistry flow between about 0.5 liters/min and about 3liters/min, the height of the step outside the meniscus region tosuccessfully confine the meniscus was required to be larger than about0.3 mm. The head-to-head gap is dictated by the head-to-wafer gap andthe wafer and carrier thickness. The head-to-head gap that has shownpromising results is between about 2.3 mm and 5 mm with an operationalgap of about 3 mm. Additionally, it is found that optimal confinement ofthe meniscus is possible when the minimum height of the step 118, 128,outside the meniscus region is about 3 mm. Based on the operatingconstraints, it is determined that the optimal containment is achievedwhen the height of the step wall outside the meniscus pocket 130 isabout 0.150 inches or about 3.75 mm. The operational gap defined by thegap between the step feature of the first and the second chemical headsthat have shown promising results is about 3 mm. Operational gap dependson surface energy which is a function of the liquid chemistrycomposition and temperature of the liquid chemistry when applied to thewafer.

Angled inlet conduits 112, 122, are defined in the chemical heads 110,120, and are located just inside an outer edge of the pocket of meniscus130 close to the step, in one embodiment. Variation in configuration andlocation of the inlet conduits has been discussed extensively withreference to FIG. 1. The angled inlet conduits are spaced apart from astep wall and configured to deliver the liquid chemistry into themeniscus pocket 130 in a single phase. In one embodiment, the inletconduits 112, 122, are angled at about 20° to the meniscus plane normal.The angled delivery provides the momentum to move the liquid chemistryaway from the step wall thereby ensuring that the containmentcharacteristics of the meniscus are substantially preserved. By definingthe inlet conduits to be close to the walls of the step 118, 128, themeniscus confinement boundary can be established as close to the pocketboundary as possible. Thus, the meniscus boundary is defined by thephysical confinement walls. The delivery and inner return conduits arespaced so as to maximize the volume where the liquid chemicalre-circulates to maintain a uniform composition of the liquid. Walls ofthe step 118, 128, adjacent to the pocket of meniscus are offset fromeach other such that the step 128 of the lower chemical head is extendedoutward of the meniscus with respect to the wall of the step 118 of theupper chemical head. An optimal offset between the walls of the steps,118, 128, is between about 0.8 mm to about 6 mm with an optimal offsetat about 0.05″ or about 1.25 mm. It should be noted that due to theoffset, the lower chemical head is physically wider than the upperchemical head. A gutter 126 is defined at both the leading edge andtrailing edge of the lower head 120 to receive an overflow of liquidchemistry applied to the wafer.

In one embodiment, additional inlet conduits may be provided tointroduce the liquid chemistry into the pocket of meniscus forapplication to the portion of the surface of the wafer 100 exposed tothe meniscus. The additional inlet conduits may be positioned anywhereinside the confined meniscus boundary. Since the additional inletconduits are located inside the boundary of the meniscus and not at theleading or trailing edge, the conduits need not have to be angled.Instead, the conduits may be disposed normal to the plane of themeniscus so that the liquid chemistry may be introduced directly intothe liquid bulk in a single phase. An exemplary additional inlet conduit112-a is shown in FIG. 2A, which illustrates an alternate embodiment ofthe chemical head used in delivering liquid chemistry to the surface ofthe substrate 100. The momentum of the liquid chemistry delivery flow isin line with the flow of the liquid chemistry within the meniscusthereby maintaining the meniscus confinement wall.

An inner return conduit is defined at each of the upper chemical head110 and lower chemical head 120. The inner return conduits, 114, 124,are located at the trailing edge of the chemical heads 110, 120 and arelocated within the meniscus pocket 130 so that the liquid chemistry maybe removed in a single phase. The inner return conduits may be angled(inner return conduit 114) or straight (inner return conduit 124) asillustrated in FIG. 2. In another embodiment, multiple inner returnconduits are defined at each of the upper chemical head 110 and lowerchemical head 120. The multiple inner return conduits are located withinthe meniscus pocket 130 so that the liquid chemistry is removed in asingle phase. FIG. 2A illustrates one such embodiment where two rows ofinner return conduits are present. The meniscus pocket formed in thelower chemical head 120 may be extra deep to avoid any left over andstagnant liquid chemistry from wetting the carrier transporting thewafer. In one embodiment the depth of the meniscus pocket in the lowerchemical head 120 that has shown promising results is about 0.130″ orabout 3.25 mm.

Using a single phase delivery and single phase return, air flow iseliminated from the delivery network and with it the disadvantagesassociated with the air flow. One of the disadvantages associated withair flow includes uncontrolled evaporation. Uncontrolled evaporationresults in substantial liquid chemistry loss. As some of the liquidchemistry used in the cleaning process are expensive, the liquidchemistry loss adds to the cost of cleaning the wafer. The otherdisadvantage is the introduction of bubbles into the liquid medium whichmay result in cavitation. Uncontrolled cavitation may damage thefeatures formed on the wafer making the use of air flow veryundesirable. Other disadvantages of air bubbles in the delivery includenon uniform chemical exposure as the air bubbles can locate themselvesat the wafer-liquid interface, impeding the wetting of the wafer surfaceby the liquid chemical and drying problem including high particle countand particle streaking as the uncontrolled 3-phase (solid(wafer)-liquid-air) interface can introduce drying marks.

In addition to the first and second chemical heads, rinse heads may beused to rinse the surface of the wafer after a chemical clean. FIG. 3illustrates a side view of a simplified block diagram of a pair of rinseheads used in rinsing the wafer after the chemical clean. After thechemical clean, the wafer is moved under a first rinse head 210 and asecond rinse head 220. As the wafer 100 is moved from under the chemicalheads, 110, 120, to under the rinse heads 210, 220, the wafer 100 iscovered by a layer of liquid chemistry 132 that is left over from thechemical clean. The rinse heads 210, 220 are disposed to cover at leasta portion of a top side and an underside of the wafer surface and definea pocket of meniscus 230 over at least a portion of the wafer 100. Aportion of the meniscus pocket 230 defined by the second rinse head 220may be deeper than the one defined by the first rinse head 210. This isto provide the physical confinement of the rinsing chemical meniscus sothat the characteristics of the meniscus are substantially preserved.

In one embodiment, the rinse heads are equipped with angled inletconduits, 212, 222, that are configured to introduce a rinsing chemistryinto the meniscus pocket 230. The angled inlet conduits are located at aleading edge of the first and second rinse heads, 210, 220, and withinthe periphery of the meniscus pocket 230 so as to introduce the rinsingchemistry in a single phase directly into the meniscus pocket 230. In analternate embodiment, in addition to the angled inlet conduits, therinse heads may include additional inlet conduits 212-a disposed withinthe meniscus pocket. As these additional inlet conduits 212-a aredisposed inside the meniscus pocket, they need not have to be providedat an angle. Instead, they are provided normal to the plane of themeniscus within the meniscus pocket. An exemplary rinse head with theadditional inlet conduit, 212-a, disposed normal to the plane of themeniscus is illustrated in FIG. 3A. A step (218, 228), similar to theone described with reference to the chemical heads, is defined in eachof the first and second rinse heads, 210, 220. The steps, 218, 228, aredefined along at least a portion of an outer periphery of the meniscuspocket 230 at a leading edge of the rinse heads 210, 220. The stepprovides the physical confinement of the meniscus within the boundariesof the meniscus pocket 230 defined between the rinse heads. The heightof a wall of the step in each of the rinse heads, 210, 220, isconfigured to ensure that the characteristics of the meniscus aresubstantially preserved. The walls of the steps, 218, 228, adjacent tothe meniscus pocket 230 at the first and second rinse heads are offsetsuch that the wall of the step 228 at the lower rinse head 220 isdisposed outward of the meniscus in relation to the wall of the step 218at the upper rinse head 210. This is to counterbalance any asymmetry ofmeniscus internal pressure found within the meniscus in the meniscuspocket 230. In one embodiment, the offset between the walls of the stepsat the lower head and the upper head is similar to the ones discussedwith reference to chemical heads of FIG. 1.

An inner return conduit is defined at each of the rinse heads, 210, 220,to remove the rinsing chemistry during a rinsing cycle, in oneembodiment. The inner return conduits, 214, 224, are located at thetrailing edge of the rinse heads within the pocket of meniscus 230 sothat the rinsing chemistry may be removed in a single phase. The innerreturn conduits, 214, 224, may be disposed angularly or may be disposedstraight. In another embodiment, multiple inner return conduits areprovided at each of the rinse heads, 210, 220, to remove the rinsingchemistry. FIG. 3A illustrates one such example with two inner returns.The inner return conduits need not be located at the trailing edge butcan be located anywhere within the meniscus pocket after the inletconduits so as to ensure removal of rinsing chemistry in a single phase.In addition to the inner return conduits, 214, 224, that enable singlephase returns, the rinse heads, 210, 220, may include outer returnconduits, 232, 234, disposed at the periphery of the meniscus pocket 230so that the rinsing chemistry may be removed in two-phase. The meniscusnear the two phase outer return conduits, 232, 234, may be exposed toeither ambient air or to other chemicals applied to the wafer surface.In one embodiment, a flow of Nitrogen and/or IsoPropyl Alcohol (IPA)vapor may be introduced at the periphery of the meniscus pocket 230. TheNitrogen/IPA vapor may be introduced during a drying cycle and may actas drying agent to dry the wafer after a rinsing cycle. The outer returnconduits, 232, 234, remove the rinsing chemistry along with theNitrogen/IPA vapors in two phase after the rinsing/drying cycle.

In one embodiment, the lower rinse head 220 may also include a gravitydrain 226 along a leading edge. FIG. 4 illustrates various componentfeatures that are used in the physical confinement of a liquid meniscusat the wafer surface. As shown in FIG. 4, the gravity drain 226 may beused to collect any rinsing chemistry and liquid chemistry that may flowout of the meniscus pocket 230 during the rinsing process. Thefunctionality of the gravity drain 226 in the rinse head is similar innature to the gravity drain 126 provided in the chemical head of FIGS. 1and 2. The location of the gravity drain 226 is exemplary and should notbe construed restrictive. As a result, in addition to the gravity drain226 in the leading edge, a second gravity drain may be provided at thetrailing edge of the lower rinse head 220 to collect the rinsingchemistry. The wafer moves through the rinse heads 210, 220, and emergessubstantially clean, free of chemical and dry.

The chemical heads described in the aforementioned embodiments enablesapplication of chemistries up to at least about 70° C. Liquidchemistries are often applied at temperatures that are generally aboveroom temperatures. Conventional chemical heads that are used in thechemical clean cannot operate at temperatures above room temperature dueto deformation caused by the static temperature gradient that naturallydevelops during the application of the chemistries at highertemperature. On the other hand, chemical heads used in the presentembodiments are able to overcome the static temperature gradient for amore efficient clean, thereby making this a more efficient design.

The embodiments of the invention are not restricted to a system ofchemical heads which are used to dispense and remove liquid chemistryand rinse heads that are used to dispense and remove rinsing chemistry.In an alternate embodiment of the invention, a drying head may be usedin addition to the chemical heads and rinse heads. The drying head issimilar in structure to the rinse head 210 and is used to remove anyliquid chemistry left behind on the surface of the substrate from prioroperations, such as cleaning and rinsing. In an alternate embodiment ofthe invention, the drying head may be used in place of the rinse headduring cleaning of the substrate surface. In yet another embodiment, thesystem for physically confining a liquid meniscus applied at a wafersurface includes a chemical head paired with a traditional airentrainment rinse head. The chemical head provides the cleaningchemistry for cleaning the substrate and the rinse head enables rinsingthe substrate after the cleaning operation. As can be seen, variouscomponents can be used in various configurations to physically confinethe liquid meniscus applied to the wafer (substrate) surface. Theembodiments described herein are exemplary and should not be consideredrestrictive. Other configurations with the various components arefeasible.

FIG. 7 illustrates a system for physically confining a liquid meniscusapplied at a wafer surface, in one embodiment of the invention. Thesystem includes a pair of chemical heads, 110, 120, to clean the waferafter a fabrication operation and a pair of rinse heads, 210, 220, torinse the wafer after the chemical clean. The number of pairs andorientation of the chemical heads, 110, 120, and rinse heads 210, 220,are exemplary and should not be considered restrictive. Any number ofpairs of chemical heads and rinse heads may be used in any orientationso long as the functionality of the invention is maintained. Thecomponents of the chemical heads and rinse heads in the system aresimilar to the ones that have been described earlier with reference toFIGS. 2-5. The system includes a wafer carrier mechanism that receives,holds and transports the wafer along a plane. The carrier mechanism canbe any carrier mechanism that is well known in the art or any othercarrier mechanism that provides the functionality of the current carriermechanism. The first and second chemical heads are disposed to cover atleast a portion of a top and an underside of the wafer as the wafermoves along the axis. The first and second chemical heads define apocket of meniscus into which liquid chemistry may be delivered duringchemical clean. The pocket of meniscus provides a layer of meniscus tocover the portion of the top and underside of the wafer exposed to thefirst and second chemical heads as the wafer moves through the pocket ofmeniscus under the chemical heads.

Angled inlet conduits are provided at the leading edge of the first andsecond chemical heads inside a periphery of the meniscus pocket so as tointroduce the liquid chemistry into the meniscus pocket in a singlephase. Inner return conduits are provided at the trailing edge of thechemical heads so as to remove the liquid chemistry in a single phase.It should be noted that the location of the inlet conduits and innerreturn conduits is exemplary and should not be considered restrictive.The inlet conduits and inner return conduits can be located anywherewithin the meniscus pocket so long as they maintain the respectivefunctionality. A step is defined along at least a portion of an outerperiphery of the meniscus pocket to act as a physical barrier for themeniscus substantially confining the meniscus within the pocket. Theheight of the step is defined such that it is sufficient to preserve theconfinement characteristics of the meniscus. Walls of the steps adjacentto the meniscus pocket in the first and second chemical heads areconfigured such that the wall of the step in the lower head is extendedoutward with respect to the wall of the step in the upper head tocounterbalance any asymmetry associated with the internal pressure ofthe meniscus. One or more gravity drains are disposed at any one of theleading edge, trailing edge or both the leading edge and trailing edgeof the chemical heads to capture the liquid chemistry that spills out ofthe meniscus pocket. The captured liquid medium can be reused during thecurrent cleaning or subsequent cleaning process.

The rinse heads, 210, 220, are similar in structure to the chemicalheads except that the rinse heads are configured to deliver a rinsingchemistry into the meniscus pocket. The rinse heads include angled inletconduits, inner return conduits, gravity drains at the leading and/ortrailing edge of the rinse heads, steps formed along one or more wallsof the meniscus pocket to confine the meniscus within. In addition tothe aforementioned components, the rinse heads include an outer returnconduit at the outer periphery of the meniscus pocket. The outer returnconduit enables collection of the rinsing chemistry in two phase. Therinsing chemistry at the outer periphery of the meniscus pocket near theouter return conduit may be exposed to ambient air or other chemicalapplied to the surface of the wafer. The rinsing chemistry together withthe other chemical is removed by the outer return conduit. In thisembodiment, the returned rinsing chemistry cannot be reused as it mayhave mixed with the other chemicals resulting in change of chemicalcomposition. As a result, the rinsing chemistry collected by the outerreturn conduit will be discarded. In one embodiment, the rinse heads maybe configured to perform a drying operation by applying a drying agent,such as Nitrogen and/or Isopropyl Alcohol (IPA) to the surface of thewafer after the rinsing operation in order to substantially dry thewafer. The outer return conduit removes the drying agent and the rinsingchemistry after the rinsing and drying operations.

It should be noted that the carrier moves the wafer slowly through thesystem so that the surface of the wafer may be sufficiently exposed tothe various chemistries for a substantial cleaning of the wafer. As thewafer moves through the chemical heads, the wafer experiences focusedcleaning by the confined liquid chemistry. As the wafer emerges out fromunder the chemical heads, a layer of liquid chemistry may be left on thewafer surface. The layer may be left behind to prevent othercontaminants from adhering to the wafer surface, to prevent prematuredrying or for any other reasons. As the wafer moves through and emergesout from under the rinse heads, the liquid chemistry is removed alongwith any other remnant chemicals. When the rinse heads are configured toprovide drying agents, the emerging wafer is substantially dry. Theexposure time for the wafer under each of the chemical and rinse headsfor optimal cleaning and drying may depend on the amount of contaminantsand level of clean desired. In one embodiment, the exposure time isdefined as a function of the width of the pocket of meniscus+thedistance between the chemical and rinse menisci and the wafer velocity,as shown as element 505 in FIG. 7. The width of the meniscus, thedistance between the chemical and the rinse menisci and the wafervelocity may be adjusted so as to provide an optimally clean wafer.

In one embodiment, the rinse heads may be integrated with the chemicalheads. In this embodiment, the chemical heads may be configured to keepthe liquid chemistry meniscus distinct from the rinsing chemistrymeniscus so as to allow liquid chemistry reclaim. The reclaimed liquidchemistry may be reused during current cleaning or in subsequentcleaning process, thus making optimal use of expensive liquid chemistry.In another embodiment, the rinse heads may be kept distinct from thechemical heads. By keeping the chemical heads and rinse heads distinct,it is possible to apply the liquid chemistry using operating constraintsthat may be different from the operating constraints of the rinsingchemistry. For instance, the wafer may be treated to a hot liquidchemistry and cold rinse chemistry. Additionally, by keeping the rinseheads distinct from the chemical heads, any configuration changes to thechemical or rinse heads may be individually attained without affectingthe other heads' configuration. The aforementioned embodiments providefor a substantial confinement of a liquid meniscus so that a morefocused wafer clean operation can be achieved.

With the above detailed description of the various embodiments, a methodfor physically confining a meniscus of liquid medium applied over awafer will now be discussed with reference to FIG. 8. FIG. 8 illustratesvarious operations involved in physical confinement of a meniscus ofliquid medium, in one embodiment of the invention. The method begins atoperation 610 wherein a liquid chemistry is applied to a semiconductorwafer through inlet conduits. A pocket of meniscus is defined by a pairof chemical heads to substantially cover at least a portion of a top andunderside surface of a wafer that is moving under the chemical heads. Anangled inlet conduit is defined at the leading edge of the chemicalheads within a periphery of the meniscus pocket to enable introductionof the liquid chemistry into the meniscus pocket in a single phase. Theconfinement characteristics of the liquid chemistry meniscus ispreserved by a step defined along a leading edge covering at least aportion of an outer periphery of the meniscus pocket, as illustrated inoperation 620. The height of the step outside of the meniscus pocket isdefined based on one or more operating constraints associated with theliquid medium and the chemical heads so that the confinementcharacteristics of the liquid medium are preserved. Additionally, wallsof the step in the chemical heads are designed such that the wall of thestep of the lower chemical head is extended outward of the meniscus inrelation to the wall of the step of the upper chemical head so as tocounterbalance any asymmetry in the meniscus internal pressure. Theportion of the surface of the wafer covered by the meniscus pocket issufficiently exposed to the liquid chemistry for an optimal clean andthe liquid chemistry is removed through inner return conduits in asingle phase, as illustrated in operation 630. The inner return conduitsare defined at a trailing edge of the chemical heads within the pocketof meniscus so that the liquid medium may be returned in single phase.By providing single phase delivery and return for the liquid medium, theliquid medium can be reused in subsequent cleaning operations therebymaking optimal use of the liquid medium. The process of introducing theliquid chemistry in single phase, preserving the confinementcharacteristics and removing the liquid chemistry in single phase may becontinued for subsequent wafers.

FIG. 9 illustrates process operations for confining liquid chemistrymeniscus applied over a surface of a wafer, in an alternate embodimentof the invention. The process begins with defining a pocket of meniscusbetween a first and second chemical heads, as illustrated in operation710. The meniscus pocket is defined to cover at least a portion of a topand underside surface of a semiconductor wafer moving under the firstand second chemical heads. The width of the meniscus pocket may bedefined based on the geometry of the chemical heads. A step is definedat a leading edge of the first and second chemical heads along an outerperiphery of the meniscus pocket so as to cover at least a portion ofthe meniscus pocket, as illustrated in operation 720. The step may coverthe meniscus pocket partially or completely. The height of an outer wallof the step adjoining the meniscus pocket is defined to be at least at athreshold value. The threshold value may be defined as a function of oneor more operating constraints associated with the chemical heads and theliquid chemistry applied to the surface of the wafer. The liquidchemistry is selected and applied to the wafer surface through inletconduits defined in the first and second chemical heads, as illustratedin operation 730. The type and operating constraints associated with theliquid chemistry are selected based on a type, size, physical andchemical characteristics of contaminants that need to be removed and thecharacteristics of the wafer including the characteristics of thefeatures formed on the wafer over which the liquid chemistry is applied.The inlet conduits are formed inside a periphery of the meniscus pocketand angled inwards away from the outer wall of the meniscus pocket sothat the liquid medium can be introduced into the pocket of meniscus ina single phase. When the liquid medium is applied at an angle, themomentum of the liquid medium will make the liquid medium to flow awayfrom the outer wall of the step, thereby substantially confining theliquid medium meniscus. The liquid medium meniscus is further confinedby an offset in the steps of the first and second chemical heads, asillustrated in operation 740. The outer walls of the steps are offsetsuch that the wall of the step of the second chemical head disposed onthe underside of the wafer is extended outwards in relation to the wallof the step of the first chemical head disposed on the top side of thewafer. This is to counterbalance any asymmetry associated with internalmeniscus pressure.

After sufficient exposure of the wafer surface to the liquid chemistry,the liquid chemistry is removed in a single phase through inner returnconduits, as illustrated in operation 750. The amount of exposure of thewafer surface is defined by exposure time. The exposure time is definedas a function of the wafer carrier velocity and the width of themeniscus pocket+the distance between the chemical and rinse menisci, asillustrated with reference to FIG. 7. The inner return conduits aredefined at the first and second chemical heads within the innerperiphery of the meniscus pocket so that the liquid chemistry may bereturned in single phase. As mentioned earlier, the inner returnconduits may be located anywhere within the meniscus pocket. The processof applying the liquid chemistry in single phase, preserving theconfinement characteristics of the liquid chemistry meniscus during thecleaning process and removal of the liquid chemistry in single phase canbe repeated for subsequent wafer cleans.

As can be seen, providing a single phase delivery, single phase returnand maintaining the meniscus characteristics during chemical clean,optimal clean is achieved while ensuring optimal use of the costlyliquid chemistry. The embodiments avoid the use of air flow therebypreventing uncontrolled evaporation and subsequent loss of liquidchemistry.

For more information on proximity heads, orientation and configurationof proximity heads, configuration and functions of arm assembly, andtransducers within proximity heads for cleaning using acoustic energy,reference can be made to U.S. application Ser. No. 10/611,140 filed onJun. 30, 2003, entitled “METHOD AND APPARATUS FOR CLEANING A SUBSTRATEUSING MEGASONIC POWER” and assigned to the assignee of the currentapplication, which is incorporated herein by reference.

Exemplary proximity heads and their respective configurations andpatterns of the inlet conduits as well as the outlet conduits may beseen in U.S. patent application Ser. Nos. 10/261,839, 10/404,270, and10/330,897 which have been incorporated herein by reference. Therefore,any, some, or all of the proximity heads described herein may beutilized in any suitable configuration for suitable substrate cleaningand drying. In addition, the proximity head may also have any suitablenumbers or shapes of outlet conduits and inlet conduits.

For more information on the viscoelastic material used for cleaning thesubstrate, reference can be made to U.S. Provisional Application No.61/013,950 filed on Dec. 14, 2007, entitled “MATERIALS AND METHODS FORPARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA,” assigned to theassignee of the instant application, which is incorporated herein byreference.

The liquid chemistry may be a two-phase (solid-liquid) chemical or achemistry that is applied using an Advanced Mechanical Clean (AMC)technique. Some of the liquid chemistry that have been used includeHydrofluoric acid (HF), Hydrochloric acid (HCL), Sulfuric acid (H₂SO₄),Ammonium Hydroxide (NH₄OH), Hydrogen peroxide (H₂O₂). Some of the commonclean chemistries are called Diluted Sulfuric acid and Peroxide (DSP),DSP with added HF (DSP+), Sulfuric acid and Peroxide Mixture (SPM),Standard Clean 1 (SC1), Standard Clean 2 (SC2), Ammonium PeroxideMixture (APM). Proprietary aqueous based clean solutions are also used.For more details about the liquid and cleaning chemistry, reference canbe made to U.S. patent application Ser. No. 11/532,491, (Attorney Docket# LAM2P548B), filed on Sep. 15, 2006, entitled “METHOD AND MATERIAL FORCLEANING A SUBSTRATE”, which is incorporated herein by reference.

While this invention has been described in terms of several preferredembodiments, it will be appreciated that those skilled in the art uponreading the preceding specifications and studying the drawings willrealize various alterations, additions, permutations and equivalentsthereof. It is therefore intended that the present invention includesall such alterations, additions, permutations, and equivalents as fallwithin the true spirit and scope of the invention.

What is claimed is:
 1. A method for making a chemical head for useproximate to a surface to be processed, the method comprising: forming aplurality of first return conduits from a first flat region in a headsurface; and forming a plurality of second return conduits from a secondflat region in the head surface, the second flat region being disposedimmediately adjacent to the first flat region, wherein the second flatregion being in a plane substantially parallel to and offset from thefirst flat region; wherein at least one of the first return conduits andthe second return conduits being formed at a first angle relative to thehead surface, the first angle being greater than about 20 degrees to ameniscus plane normal.
 2. The method of claim 1, wherein forming atleast one of the first return conduits and the second return conduits atthe first angle relative to the head surface includes: forming the atleast one of the first return conduits at the first angle relative tothe head surface and forming the at least one of the second returnconduits at the first angle relative to the head surface, wherein the atleast one of the first return conduit and the at least one of the secondreturn conduit are substantially parallel.
 3. The method of claim 1,wherein forming at least one of the first return conduits and the secondreturn conduits at the first angle relative to the head surfaceincludes: forming the at least one of the first return conduits at thefirst angle relative to the head surface wherein the first angle beingangled toward a center of the chemical head; and forming the at leastone of the second return conduits at a second angle relative to the headsurface, wherein the second angle being angled away from a center of thechemical head.
 4. The method of claim 1, wherein forming at least one ofthe first return conduits and the second return conduits at the firstangle relative to the head surface includes: forming the at least one ofthe first return conduits at the first angle relative to the headsurface wherein the first angle being angled away from a center of thechemical head; and forming the at least one of the second returnconduits at a second angle relative to the head surface, wherein thesecond angle being angled toward a center of the chemical head.
 5. Themethod of claim 1, further comprising coupling a vacuum source to theplurality of first return conduits.
 6. The method of claim 1, whereinthe second return conduits being formed at a trailing edge of the secondflat region on the head surface.
 7. The method of claim 1, wherein thefirst angle being angled toward a center of the chemical head.
 8. Themethod of claim 1, wherein the offset between the second flat region andthe first flat region is between about 0.8 mm to about 6 mm.
 9. Themethod of claim 1, wherein the offset between the second flat region andthe first flat region is about 1.25 mm.
 10. The method of claim 1,wherein at least one of the first return conduits and the second returnconduits are formed in a row.
 11. The method of claim 1, wherein thesurface to be processed is a semiconductor wafer surface.
 12. The methodof claim 1, wherein the surface to be processed is substantiallyparallel to the head surface.
 13. The method of claim 1, furthercomprising: forming a first return chamber in the chemical head, whereinthe plurality of first return conduits are coupled to the first returnchamber; and forming a second return chamber in the chemical head,wherein the plurality of second return conduits are coupled to thesecond return chamber.
 14. A method for making a chemical head for useproximate to a surface to be processed, the method comprising: forming afirst return chamber in the chemical head; forming a second returnchamber in the chemical head; forming a plurality of first returnconduits from a first flat region in a head surface to the first returnchamber; forming a plurality of second return conduits from a secondflat region in the head surface to the second return chamber, the secondflat region being disposed immediately adjacent to the first flatregion, wherein the second flat region being in a plane substantiallyparallel to and offset from the first flat region, wherein the secondreturn conduits being formed at a trailing edge of the second flatregion on the head surface; and wherein at least one of the first returnconduits and the second return conduits being formed at a first anglerelative to the head surface, the first angle being greater than about20 degrees to a meniscus plane normal.
 15. The method of claim 14,further comprising coupling a vacuum source to the plurality of firstreturn conduits.
 16. The method of claim 14, wherein the offset betweenthe second flat region and the first flat region is between about 0.8 mmto about 6 mm.
 17. The method of claim 14, wherein the first angle beingangled toward a center of the chemical head.
 18. A method for making achemical head comprising: forming a plurality of first return conduitsfrom a first flat region in a head surface; and forming a plurality ofsecond return conduits from a second flat region in the head surface,the second flat region being disposed immediately adjacent to the firstflat region, wherein the second flat region being in a planesubstantially parallel to and offset from the first flat region; whereinat least one of the first return conduits being formed at a first anglerelative to the head surface and wherein at least one of the secondreturn conduits being formed at a second angle relative to the headsurface and wherein at least one of the first angle and the second anglebeing greater than about 20 degrees to a meniscus plane normal.